Publications
Selected Articles

L.C. Yang, G.S. Chen, and A. Rockett, “Surface Polarities of Sputtered Epitaxial CuIn Se2 and Cu1 In3 Se5 Thin Films Grown on GaAs (001) Substrates,” Appl. Phys. Lett. 86(20), 1-3 (2005).

A. Rockett, D. Liao, C. Lei, C. Mueller, and I. Robertson, “The Effect of Na in Polycrystalline and Single Crystal CuIn 1-xGa xSe 2.” Thin Solid Films, 480-1, 2-7 (2005).

A. Rockett, DD. Johnson, S.V. Khare, B.R. Tuttle, “Prediction of Dopant Ionization Energies in Silicon: The Importance of Strain, ” Phys. Rev. B. 6823(23):3208, (2003).

A. Rockett, D. Liao, J.T. Heath, J.D. Cohen, Y.M. Strzhemechny, L.J. Brillson, K. Ramanathan, and W.N. Shafarman, “ Near-surface Defect Distributions in Cu(In,Ga)Se 2”, Thin Solid Films 431-2, 301-6 (2003).

O. Lundberg, J. Lu, A. Rockett, M. Edoff, L. Stolt, “Diffusion of Indium and Gallium in Cu(In,Ga)Se 2 Thin Film Solar Cells,” J. Phys. and Chem. of Solids, 64(9,10), 1499-1504 (2003).

D. Liao and A. Rockett, “Cu depletion at the CuInSe 2 Surface,” Appl. Phys. Lett. 82(17), 2829-2831 (2003).

D. Liao and A. Rockett, “ Cd-doping at the CuInSe 2/CdS heterojunction,” J. Appl. Phys. 93(11), 9380-2 (2003).

J.T. Heath, J.D. Cohen, W.N. Shafarman, D.X. Liao, and A.A. Rockett, “Effect of Ga content on defect states in CuIn 1-xGa xSe 2 photovoltaic devices,” Appl. Phys. Lett., 80(24), 4540-2. (2002).

S. Kodambaka, V. Petrova, S.V. Khare, D. Gall, A. Rockett, I. Petrov, and J.E. Greene, “Size-dependent detachment-limited decay kinetics of two-dimensional TiN islands on TiN(111)”, Phys. Rev. Lett., 89(17), 176102/1-4. (2002).

Y.M. Strzhemechny, P.E. Smith, S.T. Bradley, D.X. Liao, A.A. Rockett, K. Ramanathan, and L.J. Brillson, “Near-surface electronic defects and morphology of CuIn 1-xGa xSe2,” J.Vac. Sci. & Tech. B20(6), 2441-8 (2002).

D. Liao and A. Rockett, "Epitaxial growth of Cu(In,Ga)Se2 on GaAs(110)", J Appl. Phys 91(4), 1978-83 (2002).

A. Rockett, R. N. Bhattacharya, C. Eberspacher, V. Kapur, and S.-H. Wei, "Basic Research Opportunities in Cu-Chalcopyrite Photovoltaics," in Photovoltaics for the 21st Century. Proceedings of the International Symposium. (Electrochem. Soc. Proceedings Vol.99-11). Electrochem. Soc. 1999, pp.232-40. Pennington, NJ, USA.

A. Rockett, J.S. Britt, T. Gillespie, C. Marshall, M.M. Al Jassim, F. Hasoon, R. Matson, B. Basol, "Na in selenized Cu(In,Ga)Se2 on Na-containing and Na-free glasses: distribution, grain structure, and device performances." Thin Solid Films 372(1-2), 212-217 (2000 Aug 22).

Z. Wang, D. M. Diatezua, D-G. Park, Z. Chen, H. Morkoc, and A. Rockett, "Plasma nitridation of thing Si layers for GaAx dielectrics," J. of Vac. Sci. & Tech. B, 17(5), 2034-9 (1999).

A. Rockett, K. Granath, S. Asher, M. M. Al Jassim, F. Hasoon, R. Matson, B. Basol, V. Kapur, J. S. Britt, T. Gillespie and C. Marshall, "Na Incorporation in Mo and CuInSe2 from Production Processes", Solar Energy Materials and Solar Cells, 59(3), 255-64 (1999).

M. Bodegard, K. Granath, L. Stolt, and A. Rockett, "The Behavior of Na Implanted Into Mo Thin Films During Annealing," Solar Energy Mater. And Solar Cells 58(2), 199-208 (1999).

David J. Schroeder, Jose Luis Hernandez, Gene D. Berry and Angus A. Rockett, "Hole Transport and Doping States in Epitaxial CuIn1-xGaxSe2", J. Appl. Phys. 83(3), 1519 (1998).

D. M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, and H. Morkoc, "Si3N4 on GaAs by Direct Electron Cyclotron Resonance Plasma-Assisted Nitridation of Si Layer in Si/GaAs Structure", J. Vac. Sci. Technol. B16(2), 507 (1998).

Selected Posters

AVS June 06 Meeting

Luminescence of CuInSe2 Bicrystals

Damon Hebert

AVS October 07 Meeting

Photoluminescence Excitation Spectroscopy of Cu(InGa)Se2 thin films

Damon Hebert

AVS October 07 Meeting

CuInSe2 Bicrystal

Allen Hall

 

News

Professor Angus A. Rockett • Phone: (217) 333-0417 • Fax: (217) 333-2736 • Email: arockett@uiuc.edu