Thin-Film Photovoltaics
 
 

Esteban Cruz Hernández

Physics Department, Center of Investigation and Advanced Studies
CINVESTAV-IPN
Av. IPN 2508
México D.F. 07360 México
Phone: (55) 5061-3800
Fax: (55) 5061-3838
email: ech@fis.cinvestav.mx, ech@uiuc.edu
uRL: http://www.fis.cinvestav.mx

 

Areas of specialization:
MBE growth on high index substrates; Semiconductor nanostructures.

Education
2003-2005      MSc in Physics, Physics Department. CINVESTAV-IPN, México, D.F.
2005-Present  PHD in Physics, Physics Department. CINVESTAV-IPN, México, D.F.

Publications

1. E. Cruz-Hernandez, A. Pulzara-Mora, F.J. Ramirez-Arenas, J. S. Rojas-Ramirez, V. H.
Mendez-Garcia and M. Lopez-Lopez. “Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates.’’ Jpn. Journal of Applied Physics 51, L 1556 (2005).

2. J.S. Rojas-Ramırez, A. Pulzara-Mora, E. Cruz-Hernandez, A. Perez-Centeno,M. Melendez- Lira, V.H. Mendez-Garcıa, M. Lopez-Lopez. “Photoreflectance study of InAs quantum dots on GaAs(n 1 1) substrates.’’ Physica E 32, 139 (2006).

3. E. Cruz-Hernandez, V. H. Mendez-Garcia, A. Pulzara-Mora, J. S. Rojas-Ramirez, C. Vazquez-Lopez, and M. Lopez-Lopez. ‘’Study of the homoepitaxial growth of GaAs on (631) oriented substrates.’’ J. Vac. Sci. Technol. B 24, 1568 (2006).

4. A. Pulzara-Mora, E. Cruz-Hernandez, J. Rojas-Ramirez, R. Contreras-Guerrero,M. Melendez-Lira, C. Falcony-Guajardo, M.A. Aguilar-Frutis and M. Lopez-Lopez. “Study of optical properties of GaAsN layers prepared by molecular beam epitaxy.’’ Journal of Crystal Growth 301-302, 565 (2006).

5. V.H. Mendez-Garcıa, F.J. Ramirez-Arenas, A. Lastras-Martınez, E. Cruz-Hernandez, A.
Pulzara-Mora, J.S. Rojas-Ramirez, M. Lopez-Lopez. “Structure and homoepitaxial growth of GaAs(6 3 1).’’ Applied Surface Science 252, 5530 (2006).

6. E. Cruz-Hernandez, A. Pulzara-Mora, J. Rojas-Ramirez, R. Contreras-Guerrero, D. Vazquez, A.G. Rodriguez, V.H. Mendez-Garcıa, M. Lopez-Lopez. “Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy.’’ Journal of Crystal Growth 301–302, 884 (2007).

7. J. S. Rojas-Ramirez, C. M. Yee-Rendon, E. Cruz-Hernandez, R. Contreras-Guerrero, C.
Vazquez-Lopez, M. Melendez-Lira, and M. Lopez-Lopez. “InGaAs/GaAs quantum wells and quantum dots on GaAs(11n) substrates studied by photoreflectance spectroscopy.’’ Physica Status Solidi (a) 204, No. 2, 390 (2007).

Fourier Analysis and Autocorrelation Function Applied to Periodical Nanostructures

Photoreflectance Study of the Multilevel Energy Transitions of Quantum Wires in the AlGaAs/GaAs/AlGaAs/GaAs(631)

Polarized Micro-Raman Study of GaAs/GaAs(631) Self Assembled Wire-like Arrays Grown by MBE

Wire formation in the Molecular Beam Epitaxy Growth of GaAs/GaAs(631) Characterized by RHEED

 
News

Professor Angus A. Rockett • Phone: (217) 333-0417 • Fax: (217) 333-2736 • Email: arockett@uiuc.edu